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| NTE5608 thru NTE5610 TRIAC 8 Amp Description: The NTE5608 through NTE5610 series of TRIACs are high performance glass passivated PNPN devices in a TO220 type package designed for general purpose applications where moderate gate sensitivity is required. Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Repetitive Peak Off-State Voltage (TJ = -40 to +125C, RGK = 1k), VDRM NTE5608 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V NTE5609 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V NTE5610 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V On-State Current (All Conduction Angles, TC = +85C), IT(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Non-Repetitive On-State Current (Half Cycle), ITSM 60Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 77A 50Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70A Fusing Current (t = 10ms), I2t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24A2s Peak Gate Current (t = 10s Max), IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A Peak Gate Dissipation (t = 10s Max), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W Gate Dissipation (t = 20ms Max), PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40 to +125C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40 to +125C Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3K/W Thermal Resistance, Junction-to-Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60K/W Lead Temperature (During Soldering, 1.6mm from case, 10sec max), TL . . . . . . . . . . . . . . . +250C Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Off-State Leakage Current Symbol IDRM VT VT(TO) rT Test Conditions VD = VDRM, RGK = 1k, TJ = +25C VD = VDRM, RGK = 1k, TJ = +125C On-State Voltage On-State Threshold Voltage On-State Slope Resistance IT = 12A, TJ = +25C TJ = +125C TJ = +125C Min - - - - - Typ - - - - - Max 5 2 1.85 1 80 Unit A mA V V m Electrical Characteristics (Cont'd): (TA = +25C unless otherwise specified) Parameter Gate Trigger Current Gate Trigger Voltage Holding Current Critical Rate-of-Rise Critical Rate-of-Rise, Off-State Symbol IGT VGT IH dv/dt dv/dtc Test Conditions VD = 12V, Note 1 VD = 12V, All Quadrants RGK = 1k VD = 0.67 x VDRM, RGK = 1k, TJ = +125C IT = 8A, di/dt = 3.55A/ms, TC = +85C Min - - - 50 2 Typ - - - - - Max 10 2.5 10 - - Unit mA V mA V/s V/s Note 1. For either polarity of gate voltage with reference to electrode MT1. .420 (10.67) Max .110 (2.79) MT2 .147 (3.75) Dia Max .500 (12.7) Max .250 (6.35) Max .500 (12.7) Min .070 (1.78) Max MT1 .100 (2.54) Gate MT2 |
Price & Availability of NTE5609
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